[High-tech LED News] June 23rd news, Guangdong Yinyu Chip Semiconductor Co., Ltd. LED chip research and development project has achieved a major breakthrough, through the extension and optimization of a series of process processes from epitaxy, chip to package, to make high-power LED light The effect reached 100lm/W.
The company said that the chip development has broken through three technical difficulties and obtained nine chip patent licenses. At present, 10*23mil Blu-ray chips have been successfully sold to the high-end lighting application market in South Korea.
According to reports, the
three key technical difficulties of the breakthrough of the project
: 1. Pattern substrate research and implementation of N-AlGaN/GaN Superlattice superlattice current diffusion etch barrier layer;
2. The optical micro-structure design of the light-emitting surface of the blue chip and the laser stripping technology are used to prepare a single-electrode chip;
3. High-efficiency optical design for thermal packaging design and packaging for lighting requirements.
Innovation breakthrough point: 1. Substrate pattern design and N-AlGaN/GaN superlattice current diffusion etch barrier design to improve the internal quantum efficiency of power LEDs;
2. Using the flip chip bonding process of the epitaxial wafer and the optical micro-structure design of the blue chip emitting surface to improve the luminous efficiency of the LED;
3, using the light-emitting chip and thick metal (100um or more) bonding process technology, with laser stripping technology to prepare a single-electrode chip, improve chip yield and luminous efficiency;
4. The package material with gradient refractive index is coated on the chip from high to low to improve the light extraction efficiency of the chip package.
5. Use eutectic soldering technology to reduce package thermal resistance and improve power LED reliability.
6. Cooperate with neighboring universities to cultivate LED professionals to meet the rapid development of the semiconductor lighting industry.
Technical direction: 1. Mass production of high-voltage chips can reach 120lm/w.
2, high power chip light efficiency 110lm / w,
3, high current drive, reduce the number of application chips, reduce costs.
